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| FDP6670AL/FDB6670AL May 2003 FDP6670AL/FDB6670AL N-Channel Logic Level PowerTrench(R) MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features * 80 A, 30 V RDS(ON) = 6.5 m @ VGS = 10 V RDS(ON) = 8.5 m @ VGS = 4.5 V * Critical DC electrical parameters specified at elevated temperature * High performance trench technology for extremely low RDS(ON) * 175C maximum junction temperature rating D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 20 (Note 1) (Note 1) Units V V A W W/C C 80 240 68 0.45 -65 to +175 Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.2 62.5 C/W C/W Package Marking and Ordering Information Device Marking FDB6670AL FDP6670AL Device FDB6670AL FDP6670AL Reel Size 13'' Tube Tape width 24mm n/a Quantity 800 units 45 (c)2003 Fairchild Semiconductor Corporation FDP6670AL/FDB6670AL Rev D(W) FDP6670AL/FDB6670AL Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VDD = 15 V, ID = 80 A Min Typ Max 114 80 Units mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V 30 24 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On- Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 40 A VGS = 4.5 V, ID = 37 A VGS= 10 V, ID = 40 A, TJ=125C VGS = 10 V, VDS = 10 V VDS = 10V, ID = 40 A 1 1.9 -5 5.2 6.5 7.2 3 V mV/C 6.5 8.5 9.7 m A ID(on) gFS 80 115 S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 2440 580 250 pF pF pF VGS = 15 mV, f = 1.0 MHz 1.4 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10V, VGS = 10 V, ID = 1 A, RGEN = 6 13 13 42 15 23 23 68 27 33 ns ns ns ns nC nC nC VDS = 15 V, VGS = 5 V ID = 40 A, 24 7 9 Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Notes: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 40 A (Note 1) 80 0.9 34 24 1.3 A V nS nC IF = 40 A, diF/dt = 100 A/s FDP6670AL/FDB6670AL Rev D(W) FDP6670AL/FDB6670AL Typical Characteristics 100 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 6.0V 75 3.5V 4.0V 1.8 VGS = 3.5V 1.6 4.5V 1.4 4.0V 1.2 4.5V 5.0V 6.0V 1 10V 50 25 3.0V 0 0 0.5 1 1.5 2 0.8 0 20 40 60 ID, DRAIN CURRENT (A) 80 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.021 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 80A VGS =10V ID = 40A 0.017 1.4 1.2 0.013 TA = 125oC 0.009 TA = 25oC 0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 1 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 100 VDS = 10V IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1000 VGS = 0V 100 TA = 125oC 25oC 1 -55oC 0.1 10 60 40 TA = 125oC 25oC 20 -55oC 0 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6670AL/FDB6670AL Rev D(W) FDP6670AL/FDB6670AL Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 80A 8 CAPACITANCE (pF) VDS = 10V 6 15V 20V 4 4000 f = 1MHz VGS = 0 V 3000 Ciss 2000 Coss 1000 2 Crss 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 5000 SINGLE PULSE RJC = 2.2C/W TA = 25C ID, DRAIN CURRENT (A) 10s 4000 100 RDS(ON) LIMIT 100s 1mS 10mS 100mS DC 3000 2000 10 VGS = 10V SINGLE PULSE RJA = 2.2oC/W TA = 25oC 1000 1 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RJC(t) = r(t) * RJA RJA = 2.2 C/W P(pk t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.00001 0.0001 0.001 t1, TIME (sec) 0.01 0.1 1 Figure 11. Transient Thermal Response Curve. FDP6670AL/FDB6670AL Rev D(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet SeriesTM BottomlessTM FAST CoolFETTM FASTrTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM PACMANTM POPTM ISOPLANARTM Power247TM LittleFETTM PowerTrench MicroFETTM QFET MicroPakTM QSTM MICROWIRETM QT OptoelectronicsTM MSXTM Quiet SeriesTM MSXProTM RapidConfigureTM OCXTM RapidConnectTM OCXProTM SILENT SWITCHER OPTOLOGIC SMART STARTTM OPTOPLANARTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I3 |
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